2N3820 Epitaxial Silicon Transistor

©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002 2N3820 Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25°C unless otherwis...

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2N3820

2N3820 P-Channel General Purpose Amplifier • This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. • Sourced from process 89.

TO-92

1

1. Drain 2. Gate 3. Source

Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VDG

Drain-Gate Voltage

Parameter

Ratings -20

Units V

VGS

Gate-Source Voltage

20

V

IGF

Forward Gate Current

10

mA

TSTG

Storage Temperature Range

-55 ~ 150

°C

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TC=25°C unless otherwise noted Symbol Off Characteristics

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)GSS

Gate-Source Breakdwon Voltage

IG = 10µA, VDS = 0

IGSS

Gate Reverse Current

VGS = 10V, VDS = 0

20 20

nA

V

VGS(off)

Gate-Source Cutoff Voltage

VDS = -10V, ID = -10µA

8.0

V

On Characteristics IDSS

Zero-Gate Voltage Drain Current *

VDS = -10V, VGS = 0

-0.3

-15

mA

800

Small Signal Characteristics gfs

Forward Transfer Conductance

VDS = -10V, VGS = 0, f = 1.0KHz

5000

µmhos

Ciss

Input Capacitance

VDS = -10V, VGS = 0, f = 1.0KHz

32

pF

Crss

Reverse Transfer Capacitance

VDS = -10V, VGS = 0, f = 1.0KHz

16

pF

* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%

Thermal Characteristics TA=25°C unless otherwise noted Symbol PD

Parameter Total Device Dissipation Derate above 25°C

Max. 350 2.8

Units mW mW/°C

RθJC

Thermal Resistance, Junction to Case

125

°C/W

RθJA

Thermal Resistance, Junction to Ambient

357

°C/W

* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”

©2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

2N3820

Package Dimensions

TO-92 +0.25

4.58 ±0.20

4.58 –0.15

±0.10

14.47 ±0.40

0.46

1.27TYP [1.27 ±0.20]

1.27TYP [1.27 ±0.20] ±0.20

(0.25)

+0.10

0.38 –0.05

1.02 ±0.10

3.86MAX

3.60

+0.10

0.38 –0.05

(R2.29)

Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation

Rev. I1